DC-38GHz Nonuniform Distributed Amplifier Design with Gate and Drain Line Optimization Using 0.1µm GaAs pHEMT Technology
نویسندگان
چکیده
This paper presents an optimized three-cell Nonuniform Distributed Amplifier (NUDA) suitable for optoelectronic drivers in the Q band. is first NUDA of Darlington topology designed with 0.1µm GaAs pHEMT process a transition frequency fT 130GHz. Gate microstrip line sections, drain and active device sizes were to obtain high gain large bandwidth from Monolithic Microwave Integrated Circuit (MMIC) (DA). two designs different topologies. The was three-stage Common Source (CS) that enhanced up 34GHz greater than 8dB, second stages one CS stage 38GHz 8dB. enhancement compared verified common source
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ژورنال
عنوان ژورنال: Engineering, Technology & Applied Science Research
سال: 2023
ISSN: ['1792-8036', '2241-4487']
DOI: https://doi.org/10.48084/etasr.5859